Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

Two-dimensional (2D) magnetic materials are essential for the development of next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure been reported to host coexisting magnetism topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) reveal their spin-dependent transport properties by means first-principles calculations. The pn-junction diodes sub-3-nm pin-junction field-effect transistors (FETs) show a strong rectifying effect spin filtering effect, with an ideality factor n close 1 even at reasonably high temperature. In addition, pip- nin-junction FETs give interesting negative differential resistive (NDR) effect. gate voltages can tune currents through these in large range. Furthermore, MBT-ML response light. Our results uncover multifunctional nature MBT-ML, pave road applications diverse semiconductor electric devices.